Datasheet Details
| Part number | 2N5989 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.13 KB |
| Description | NPN Transistor |
| Datasheet |
 2N5989 Datasheet
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| Part number | 2N5989 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.13 KB |
| Description | NPN Transistor |
| Datasheet |
2N5989 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 100 W -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.25 UNIT ℃/W 2N5989 isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N5989 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA ;
IB= 0 40 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N5989 | 12 AMPERE POWER TRANSISTORS | Motorola Inc |
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