DC Current Gain -
: hFE = 20-80@ IC= 4A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in general-purpose amplifier and
switchi
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isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain -
: hFE = 20-80@ IC= 4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general-purpose amplifier and
switching applications.