DC Current Gain-
: hFE = 30-150@ IC= -3A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -30V(Min)
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Power amplifier and switching circuits applications
ABSOLUTE MAXIMUM RATING
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N6110
DESCRIPTION ·DC Current Gain-
: hFE = 30-150@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -30V(Min) ··Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier and switching circuits applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
-10
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3
A
40
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c The
2N6110 Datasheet
