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2N6123 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6123.

General Description

·Collector-Emitter Sustaining Voltage- : VCE(sat) = 0.6V(Max.)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Complement to Type 2N6126 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.125 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N6123 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;

IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A;

IB= 0.15A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A;

2N6123 Distributor