Inchange Semiconductor 2N6281
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2N6281 |
|---|---|
| Datasheet | 2N6281 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : VCEO=150V(Min)●Minimum Lot-to-Lot variations for robust device Performance and reliable operation
APPLICATIONS
●Power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 A 250 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6281 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N6281ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage Ic=50mA IEBO Emitter-Base Cutoff Current VBE=6V ICEO Collector-Emitter Cutoff Current VCE= 75V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=20A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A VBE(sat)-1 Bas...