Datasheet4U Logo Datasheet4U.com

2N6281 - Silicon NPN Power Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – 2N6281

Datasheet Details

Part number 2N6281
Manufacturer INCHANGE
File Size 222.97 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2N6281 Datasheet
Additional preview pages of the 2N6281 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : VCEO=150V(Min) Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 A 25

📁 Similar Datasheet

  • 2N6281 - HIGH-POWER NPN SILICON TRANSISTORS (ETC)
  • 2N6281 - NPN POWER TRANSISTORS (New Jersey Semi-Conductor)
  • 2N6281 - NPN Transistor (SSDI)
  • 2N6280 - HIGH-POWER NPN SILICON TRANSISTORS (ETC)
  • 2N6280 - NPN POWER TRANSISTORS (New Jersey Semi-Conductor)
  • 2N6280 - NPN Transistor (SSDI)
  • 2N6282 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)
  • 2N6282 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
Other Datasheets by INCHANGE
Published: |