Datasheet Details
| Part number | 2N6322 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.62 KB |
| Description | NPN Transistor |
| Datasheet | 2N6322-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2N6322.
| Part number | 2N6322 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.62 KB |
| Description | NPN Transistor |
| Datasheet | 2N6322-INCHANGE.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base voltage 5 V IC Collector Current-Continuous 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 200 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6322 | NPN Transistor | Solid States Devices |
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2N6322 | Silicon Power Transistor | SavantIC |
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