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2N6322 - NPN Transistor

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Part number 2N6322
Manufacturer INCHANGE
File Size 179.62 KB
Description NPN Transistor
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Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) High Current Capability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and high-speed switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base voltage 5 V IC Collector C

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