Inchange Semiconductor 2N6331
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2N6331 |
|---|---|
| Datasheet | 2N6331 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : VCEO=-100V(Min)●Minimum Lot-to-Lot variations for robust device Performance and reliable operation
APPLICATIONS
●Power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -30 A 200 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6331 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6331ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage Ic=-30mA IEBO Emitter-Base Cutoff Current VBE=-5V ICEO Collector-Emitter Cutoff Current VCE= -50V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-15A; IB=- 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-30A; IB= -7.5A VB...