Inchange Semiconductor 2N6379
Silicon PNP Power Transistors
| Part No. | 2N6379 |
|---|---|
| Datasheet | 2N6379 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage●High DC Current Gain
●High Power Dissipation
APPLICATIONS
●Designed for use in industrial-military power amplifier and switching circuit application.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCE0 Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -50 A IB Base Current-Continuous -20 A PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature 250 W -65~200 ℃ -65~200 ℃ isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N6379ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)1★ Collector-Emitter Saturation Voltage IC= -20A; IB= -2A VCE(sat)2★ Collector-Emitter Saturation Voltage IC= -50A; IB= -10A VBE(sat)1★ Base-Emitter Saturation Voltage IC= -20A; IB= -2A VBE(sat)1★ Base-Emitter Saturation...