Inchange Semiconductor 2N6421
Silicon PNP Power Transistors
| Part No. | 2N6421 |
|---|---|
| Datasheet | 2N6421 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●Contunuous Collector Current-IC= -2A●Power Dissipation-PC= 35W @TC= 25℃
●Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75 V(Max)@ IC = -1A
APPLICATIONS
●Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -375 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2.0 A ICM Collector Current-Peak -5.0 A IB Base Current -1.0 A PC Collector Power Dissipation@TC=25℃ 35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5.0 ℃/W isc website：