Datasheet4U Logo Datasheet4U.com

2N6488 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6488.

General Description

·DC Current Gain Specified to 15 Amperes- : hFE =20-150@ IC= 5.0A =5.0(Min)@ IC=15A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)=80Vdc(Min) ·plement to Type 2N6491 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 90 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 IB Base Current 5 Collector Power Dissipation @ TC=25℃ 75 PC Collector Power Dissipation @ Ta=25℃ 1.8 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=5A;

IB=0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC=15A;

2N6488 Distributor