Datasheet Details
| Part number | 2N6506 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 141.95 KB |
| Description | Thyristor |
| Datasheet | 2N6506-INCHANGE.pdf |
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Overview: isc Thyristors.
| Part number | 2N6506 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 141.95 KB |
| Description | Thyristor |
| Datasheet | 2N6506-INCHANGE.pdf |
|
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·Long-term stability ·High surge current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor controls,Heating controls ·Power supply crowbar circuits 2N6506 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average forward current @Tc=85℃ IT(RMS) ITSM PG(AV) RMS on-state current @Tc=85℃ Surge non-repetitive on-state current ( 1/2 cycle,sine wave,8.3ms ) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature MIN 200 200 16 25 300 0.5 -40~125 -40~150 UNIT V V A A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 50A IGT Gate-trigger current VD = 12V;
RL=100Ω VGT Gate-trigger voltage VD = 12V;
RL=100Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 2 mA 1.8 V 40 mA 1.5 V 1.5 ℃/W Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
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