Datasheet Details
| Part number | 2N6653 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.34 KB |
| Description | NPN Transistor |
| Datasheet | 2N6653-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N6653 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.34 KB |
| Description | NPN Transistor |
| Datasheet | 2N6653-INCHANGE.pdf |
|
|
|
·High Voltage Capability ·High Current Current Capability ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desinged for use in switching and linear applications in military and power conversion.
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 350 V 300 V 7 V 20 A 30 A 10 A 150 W -65~175 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W 2N6653 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N6653 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N6653 | Bipolar NPN Device | Seme LAB |
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2N6653 | Silicon Power Transistor | SavantIC |
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