Inchange Semiconductor 2N6768
N-Channel MOSFET Transistor
| Part No. | 2N6768 |
|---|---|
| Datasheet | 2N6768 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●VGS Rated at ±20V●Silicon Gate for fast switching speeds
●IDSS 、RDS(ON) ,specified at elevated temperature
●Low drive requirements
APPLICATIONS
designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy pulse circuits.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 400 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=37℃ 14 A Total Dissipation@TC=25℃ 150 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.83 ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2N6768●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(TH) Gate Thre...