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2N6769 Datasheet PDF

Inchange Semiconductor 2N6769

N-Channel MOSFET Transistor

Part No. 2N6769
Datasheet 2N6769 Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET Transistor
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2N6769 datasheet page 1 preview

DESCRIPTION

●VGS Rated at ±20V
●Silicon Gate for fast switching speeds
●IDSS 、RDS(ON) , specified at elevated temperature
●Low drive requirements

APPLICATIONS

designed for high voltage ,high speed application ,such as off-line switching power applies,UPS,AC and DC motor controls , relay and solenoid drivers.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 450 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=37℃ 11 A Total Dissipation@TC=25℃ 150 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.83 ℃/W isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2N6769
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ELECTRICAL CHARACTERISTICS

(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(TH) G...
2N6769 page 2 preview