Inchange Semiconductor 2SA1008
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1008 |
|---|---|
| Datasheet | 2SA1008 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max.)@ IC= -1A●Fast Switching Speed
●Complement to Type 2SC2331
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -2.0 A ICM Collector Current-Peak -4.0 A Collector Power Dissipation@ Ta=25℃ 1.5 PC W Collector Power Dissipation@ TC=25℃ 15 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1008ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage...
