Inchange Semiconductor 2SA1060
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1060 |
|---|---|
| Datasheet | 2SA1060 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min)●High Power Dissipation
●Complement to Type 2SC2484
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high power audio frequency amplifier applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1060ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -5V ICBO...