Inchange Semiconductor 2SA1080
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1080 |
|---|---|
| Datasheet | 2SA1080 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.)●Good Linearity of hFE
●Complement to Type 2SC2530
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.5 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1080ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -40 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1μA; IE= 0 -40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1μA; IC= 0 -7 V VCE(sat) Coll...