Inchange Semiconductor 2SA1111
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1111 |
|---|---|
| Datasheet | 2SA1111 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V (Min)●Good Linearity of hFE
●Complement to Type 2SC2591
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for audio frequency drivers and high power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -1.5 A PC Collector Power Dissipation 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1111ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100μA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500m...