2SA1116
2SA1116 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min.)
- High Power Dissipation
- plement to Type 2SC2607
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
VCEO Collector-Emitter Voltage
-200
VEBO
Emitter-Base Voltage
-6
Collector Current-Continuous
-15
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-5
℃
Tstg
Storage Temperature
-65~150 ℃ isc website：.iscsemi....
