Inchange Semiconductor 2SA1125
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1125 |
|---|---|
| Datasheet | 2SA1125 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage●Large Current Capability
●Complement to Type 2SC2633
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for audio frequency high voltage amplifier applicationABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -50 mA ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -100 mA 1.5 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -30mA; IB= -3mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -10mA ; VCE= -5V● hFE Classifications Q R S T 90-155 130-220 185-330 260-450 2SA1125 MIN TYP.
