2SA1173 Datasheet PDF

DESCRIPTION

●High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-140V(Min)
●Good Linearity of hFE
●Low Saturation Voltage

APPLICATIONS

●Power amplifier applications

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -140 -5 -0.05 2 150 -55~150 V V A W ℃ ℃ isc Product Specification 2SA1173 isc website： isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1173

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -20mA; IB= -2mA VBE(sat) Base-Emitter Saturation Voltage IC= -20mA; IB= -2mA ICBO Collector Cutoff Current VCB= -140V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 fT DC Current Gain Current-Gain—Bandwidth Product IC= -10mA ; VCE= -10V IC= -10mA ; VCE= -10V COB Output Capacitance IE=0 ; VCB= -10V,ftest= 1MHz MIN TYP.