Inchange Semiconductor 2SA1185
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1185 |
|---|---|
| Datasheet | 2SA1185 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.)●Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.8V(Max.)@ IC= -7A
●Good Linearity of hFE
●Large Collector Current
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high power audio frequency amplifier applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -15 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta =25℃ TJ Junction Temperature -5 A 60 W 2.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1185 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1185ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakd...