Inchange Semiconductor 2SA1225
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1225 |
|---|---|
| Datasheet | 2SA1225 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High transition frequency●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●Complementary to 2SC2983
APPLICATIONS
●Power amplifier applications●Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A PC Total Power Dissipation @ TC=25℃ 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1225ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE=-1mA,IC=0 V (BR)CEONOTE Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC=-1mA ,IE=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(on) B...
