Inchange Semiconductor 2SA1232
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1232 |
|---|---|
| Datasheet | 2SA1232 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min)●Good Linearity of hFE
●Complement to Type 2SC3012
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●For audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1232 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1232ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A ICBO Collector Cutoff Current VCB= -130V; IE= 0 IEBO Em...