Inchange Semiconductor 2SA1242
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1242 |
|---|---|
| Datasheet | 2SA1242 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●hFE=100-320(IC= -0.5A; VCE= -2V)●hFE=70(Min)(IC= -4A; VCE= -2V)
●Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A)
●●High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●For medium power amplifier and strobe flash applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IB Base Current Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -0.5 A 10 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1242 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter...
