Inchange Semiconductor 2SA1259
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1259 |
|---|---|
| Datasheet | 2SA1259 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain- : hFE = 2000(Min)@ IC= -2.5A●Low Collector-Emitter Saturation Voltage : VCE(sat) = -1.5V(Max)@ IC= -2.5A
●Complement to Type 2SC3145
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for general purpose amplifier high fT and high speed switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=125℃ Tj Junction Temperature -8 A 30 W 1.75 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1259 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 V(BR)CE...