Inchange Semiconductor 2SA1280
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1280 |
|---|---|
| Datasheet | 2SA1280 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min)●Good Linearity of hFE
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high current switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1280 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1280ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -150 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -0.05A -3.0 V VBE(ON) Base-Emitter On Voltage ICBO Collector Cutoff Current IC= -50mA; Vce=-4V VCB= -1...