Inchange Semiconductor 2SA1288
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1288 |
|---|---|
| Datasheet | 2SA1288 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage●Large Current Capability
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power amplifiers●Switching regulator
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -75mA ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -0.5A ; VCE= -2V● hFE Classifications Q R S 70-140 100-200 140-280 2SA1288 MIN TYP. MAX UNIT -0.4 V -1 μA -1 μA 70 280 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
