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2SA1290 Datasheet PDF

Inchange Semiconductor 2SA1290

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SA1290
Datasheet 2SA1290 Download
Manufacturer
Inchange Semiconductor
Description POWER TRANSISTOR
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2SA1290 datasheet page 1 preview

DESCRIPTION

●Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@IC= -3.5A
●Fast Switching Speed
●Complement to Type 2SC3254

APPLICATIONS

●Various inductance lamp drivers for electrical equipment.
●Inverters, converters(strobo, flash, fluorescent lamp lighting circuits).
●Power amplifier (high power car stereo, motor controller).
●High-speed switching (switching regulator, driver).

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)CBO Collector-Base...
2SA1290 page 2 preview