Inchange Semiconductor 2SA1352
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1352 |
|---|---|
| Datasheet | 2SA1352 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V (Min)●Complement to Type 2SC3416
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for color TV chroma output, high-voltage driver applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -0.1 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.2 A 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1352ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdow...