Inchange Semiconductor 2SA1355
This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. The information contained herein is presented only as a guide for the applications of our products.| Part No. | 2SA1355 |
|---|---|
| Datasheet | 2SA1355 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●TO-220 package●High DC Current Gain
●Low Saturation Voltage
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A Total Power Dissipation @TC=25℃ 30 PT W Total Power Dissipation @Ta=25℃ 3.0 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SA1355 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1mA ; RBE= ∞ VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -40V ; IE=0 IEBO Emitter Cutoff Current VEB= -4V; IC=0 hFE DC Current Gain IC= -1.0A ; VCE= -2V fT Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V 2SA1355 MIN TYP.