Inchange Semiconductor 2SA1389
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1389 |
|---|---|
| Datasheet | 2SA1389 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)●High Speed Switching
●Wide Area of Safe Operation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High frequency power amplifiers●Audio power amplifiers
●Switching regulators
●DC-DC converters
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -160 V -160 V -7 V -12 A 120 W 150 ℃ -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(...