Inchange Semiconductor 2SA1395
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1395 |
|---|---|
| Datasheet | 2SA1395 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC= -1A●High Switching Speed
●Complement to Type 2SC3567
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for switching regulator, DC-DC converter and high frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -4 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 15 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1A; IB= -0.1A, L=1mH VCE(sat) Collector-Emitter Saturation Voltage IC= -...