Datasheet Details
| Part number | 2SA1400Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.39 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1400Z-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1400Z.
| Part number | 2SA1400Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.39 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1400Z-INCHANGE.pdf |
|
|
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·High Collector-Emitter Voltage - : VCEO= -400V(Min) ·Complement to Type 2SC3588Z ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage switching ,especially in Hybrid integrated cricuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -0.5 A PC Collector Power Dissipation @ TC=25℃ 2.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1400Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA;
IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1400-Z | PNP Transistor | NEC |
 |
2SA1400-Z | Silicon Transistor | Kexin |
 |
2SA1400-Z | PNP SILICON TRIPLE DIFFUSED TRANSISTOR | Renesas |
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