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2SA1400Z - PNP Transistor

General Description

High Collector-Emitter Voltage - : VCEO= -400V(Min) Complement to Type 2SC3588Z Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high voltage switching ,especially in Hybrid integrated cricuits.

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1400Z DESCRIPTION ·High Collector-Emitter Voltage - : VCEO= -400V(Min) ·Complement to Type 2SC3588Z ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage switching ,especially in Hybrid integrated cricuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -0.5 A PC Collector Power Dissipation @ TC=25℃ 2.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.