Datasheet Details
| Part number | 2SA1486 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.36 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1486-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1486 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.36 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1486-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·With TO-126 package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -600 V VCEO Collector-Emitter Voltage -600 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -2 A 1 W 10 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1486 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
RBE=∞ VCE(sat) Collector-Emitter Saturation Voltage IC= -0.3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1486 | PNP SILICON POWER TRANSISTOR | NEC |
| Part Number | Description |
|---|---|
| 2SA1400Z | PNP Transistor |
| 2SA1412-Z | NPN Transistor |
| 2SA1413-Z | PNP Transistor |
| 2SA1441 | Silicon PNP Power Transistor |
| 2SA1002 | Silicon PNP Power Transistor |
| 2SA1006A | PNP Transistor |
| 2SA1006B | PNP Transistor |
| 2SA1009A | PNP Transistor |
| 2SA1010 | PNP Transistor |
| 2SA1012 | TO-252 PNP Transistor |