Inchange Semiconductor 2SA1546
The 2SA1546 is designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video band Of high-resolution monitor TVs to 50MHz. The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1546 |
|---|---|
| Datasheet | 2SA1546 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
●Collector–Emitter Sustaining Voltage- : VCBO = -250 V(Min)●Complement to Type 2SC4001
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature -0.1 A -7 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1546 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE DC Current Gain IC= -10m A ; VCE=-10V VCE(sat) Collector-Emitter Saturation Voltage IC= -10mA ;IB= -1mA VBE(sat) Base-Emitter Saturation Voltage IC= -10mA ;IB= -1mA● hFE Classifications M L K 60-120 100-200...
