Inchange Semiconductor 2SA1646-Z
This type of power transistor is developed for high-speed switching and features a very low VCE(sat), is ideal for use in switching power supplies,DC/DC converters,motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high current switching. The information contained herein is presented only as a guide for the applications of our products.| Part No. | 2SA1646-Z |
|---|---|
| Datasheet | 2SA1646-Z Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Fast Switching Speed●Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@IC= -6A
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse -20 A IB Base Current-Continuous -6 A Total Power Dissipation @TC=25℃ 40 PT W Total Power Dissipation @Ta=25℃ 1.5 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SA1646-Z isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1646-ZELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= -8A; IB= -0.4A VBE(sat)-1NOTE Base-Emitter Saturation...
