Inchange Semiconductor 2SA1647-Z
This transistor is ideal for use in Switching regulators, DC/DC converters,motor drivers,Solenoid drivers and other low-voltage power supply devices,as well as for high-current switching. The information contained herein is presented only as a guide for the applications of our products.| Part No. | 2SA1647-Z |
|---|---|
| Datasheet | 2SA1647-Z Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Available for high-current control in small dimension●Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A
●Fast switching speed
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak NOTE1 Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ NOTE2 TJ Junction Temperature -10 A 18 W 1.0 150 ℃ Tstg Storage Temperature Range NOTE1:PW≤10ms,Duty cycle ≤50% NOTE2:Printing boarding mounted -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= -3A; IB= -150mA VCE(sat)-2NO...
