Inchange Semiconductor 2SA1649-Z
This transistor is ideal for use in Switching regulators, DC/DC converters,motor drivers,Solenoid drivers and other low-voltage power supply devices,as well as for high-current switching. The information contained herein is presented only as a guide for the applications of our products.DESCRIPTION
●Available for high-current control in small dimension●Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A
●Fast switching speed
●High DC current gain and excellent linearity
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak NOTE1 Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ NOTE2 TJ Junction Temperature -20 A 15 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ NOTE1:PW≤300ms,Duty cycle ≤10% NOTE2:Printing boarding mounted isc website: 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1NOTE Collector-Emitter Satur...