Inchange Semiconductor 2SA1695
POWER TRANSISTOR
| Part No. | 2SA1695 |
|---|---|
| Datasheet | 2SA1695 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Breakdown VoltageV(BR)CEO= -140V(Min)●Good Linearity of hFE
●Complement to Type 2SC4468
APPLICATIONS
●Designed for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -4 A PC 100 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor Product Specification Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1695 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -140 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -0.5 V ICBO Collector Cutoff Current VCB= -140V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current...