Inchange Semiconductor 2SA1742
This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. The information contained herein is presented only as a guide for the applications of our products.| Part No. | 2SA1742 |
|---|---|
| Datasheet | 2SA1742 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO= -60V(Min)●High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -1A)
●Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -7.0 A ICM Collector Current-Pulse -12 A IB Base Current-Continuous -2.5 A Total Power Dissipation @TC=25℃ 25 PT W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SA1742 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-Emitter Voltage IC= -10mA; IB= 0 VCBO Collector-Emitter Voltage IE= -1mA; IC= 0 VCE(sat)...
