2SA1770 Datasheet PDF

DESCRIPTION

●High breakdown voltage and large current capacity
●Small and slim package permitting
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●Complementary to 2SC4614

APPLICATIONS

●High voltage switching application

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -2.5 A 15 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1770

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAM