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2SA1878 Datasheet PDF

Inchange Semiconductor 2SA1878

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SA1878
Datasheet 2SA1878 Download
Manufacturer
Inchange Semiconductor
Description Power Transistor
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2SA1878 datasheet page 1 preview

DESCRIPTION

●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80(V)(Min.)
●Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -2.5A
●Large Current Capability-IC= -5A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed for use as a driver in DC/DC converters and actuators.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A IB Base Current-Continuous -1.5 A IBM Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5 ℃/W INCHANGE Semiconductor 2SA1878 isc website: 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1878 ELEC...
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