Inchange Semiconductor 2SA1880
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1880 |
|---|---|
| Datasheet | 2SA1880 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80(V)(Min.)●Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -5A
●Large Current Capability-IC= -10A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use as a driver in DC/DC converters and actuators.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current-Continuous -1.5 A IBM Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1880ELECTRICAL CHARACTERISTICS
TC=25℃ u...
