Datasheet Details
| Part number | 2SA1952 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.91 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1952-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1952.
| Part number | 2SA1952 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.91 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1952-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC5103 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1952 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-base breakdown voltage IC = −50µA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1952 | PNP Transistor | MCC |
 |
2SA1952 | PNP Transistor | Rohm |
| Part Number | Description |
|---|---|
| 2SA1931 | PNP Transistor |
| 2SA1932 | PNP Transistor |
| 2SA1943N | PNP Transistor |
| 2SA1964 | Silicon PNP Power Transistor |
| 2SA1002 | Silicon PNP Power Transistor |
| 2SA1006A | PNP Transistor |
| 2SA1006B | PNP Transistor |
| 2SA1009A | PNP Transistor |
| 2SA1010 | PNP Transistor |
| 2SA1012 | TO-252 PNP Transistor |