Datasheet Details
| Part number | 2SA2004 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.92 KB |
| Description | PNP Transistor |
| Datasheet | 2SA2004-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA2004.
| Part number | 2SA2004 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.92 KB |
| Description | PNP Transistor |
| Datasheet | 2SA2004-INCHANGE.pdf |
|
|
|
·Silicon PNP epitaxial planner type ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com isc & iscsemi is registered trademark NCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA2004 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
IB=- 0.25A VBE(sat) Collector-Emitter Saturation Voltage IC= -5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA2004 | Silicon PNP Transistor | Panasonic Semiconductor |
| Part Number | Description |
|---|---|
| 2SA2022 | PNP Transistor |
| 2SA2050 | PNP Transistor |
| 2SA2057 | PNP Transistor |
| 2SA2062 | PNP Transistor |
| 2SA2063 | PNP Transistor |
| 2SA2097 | PNP Transistor |
| 2SA2120 | PNP Transistor |
| 2SA2222 | TO-263 PNP Transistor |
| 2SA2222 | TO-252 PNP Transistor |
| 2SA2223 | PNP Transistor |