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2SA2050 - PNP Transistor

General Description

High DC current amplifier rate hFE:60-240@VCE=-5V,IC=-0.2A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General Purpose Switching and Amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Bas

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isc Silicon PNP Power Transistor DESCRIPTION ·High DC current amplifier rate hFE:60-240@VCE=-5V,IC=-0.2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General Purpose Switching and Amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A PC Total Power Dissipation @ Ta=25℃ 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA2050 isc website：www.iscsemi.