Datasheet Details
| Part number | 2SA2050 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.16 KB |
| Description | PNP Transistor |
| Datasheet | 2SA2050-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA2050 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.16 KB |
| Description | PNP Transistor |
| Datasheet | 2SA2050-INCHANGE.pdf |
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·High DC current amplifier rate hFE:60-240@VCE=-5V,IC=-0.2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General Purpose Switching and Amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A PC Total Power Dissipation @ Ta=25℃ 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA2050 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA2050 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE1 DC Current Gain hFE2 DC Current Gain fT Transition frequency CONDITIONS IC= -500mA;
IB= -50mA VCB= -60V;
IE= 0 VEB=-6V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA2050 | SILICON PNP TRANSISTOR | LZG |
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2SA2050 | PNP Transistor | JCET |
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