Inchange Semiconductor 2SA2050
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA2050 |
|---|---|
| Datasheet | 2SA2050 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC current amplifier rate hFE:60-240@VCE=-5V,IC=-0.2A●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●General Purpose Switching and AmplificationABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A PC Total Power Dissipation @ Ta=25℃ 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA2050 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA2050ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE1 DC Current Gain hFE2 DC Current Gain fT Transition frequency CONDITIONS IC= -500mA; IB= -50mA VCB= -60V; IE= 0 VEB=-6V; IC=0 IC= -0.2A; VCE= -5V IC= -1.5A; VCE= -5V VCE= -10V ,IC=...