Datasheet Details
| Part number | 2SA2120 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.22 KB |
| Description | PNP Transistor |
| Datasheet | 2SA2120-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA2120 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.22 KB |
| Description | PNP Transistor |
| Datasheet | 2SA2120-INCHANGE.pdf |
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·Recommended for audio frequency amplifier output stage ·Complementary to 2SC5948 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Pulse Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -24 A 4.0 W 200 150 ℃ Tstg Storage Temperature -55~150 ℃ INCHANGE Semiconductor 2SA2120 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA2120 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A;
IB= -800mA VBE(on) Base-Emitter On Voltage IC= -7A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA2120 | Silicon PNP Transistor | Toshiba |
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