Inchange Semiconductor 2SA2169
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA2169 |
|---|---|
| Datasheet | 2SA2169 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Large current capacitance●High-speed switching
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●Complementary to 2SC6017
APPLICATIONS
●relay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -13 A 20 W 0.95 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA2169 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA2169ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -250mA VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -250mA V(BR)CEO Collector-Emitter Breakdown Volta...
