Inchange Semiconductor 2SA2210
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA2210 |
|---|---|
| Datasheet | 2SA2210 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Large current capacitance●High-speed switching
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●relay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -20 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range -25 A 30 W 2 150 ℃ -55~150 ℃ 2SA2210 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA2210ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -350mA VBE(sat) Base-Emitter Saturation Voltage IC= -7A; IB= -350mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO E...